Analytical Modeling of Electric Field Distribution in Dual Material Junctionless Surrounding Gate Mosfets
نویسندگان
چکیده
In this paper, electric field distribution of the junctionless dual material surrounding gate MOSFETs (JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based devices, but junctionless has a positive flatband voltage with zero electric field. In Surrounding gate MOSFETs gate material surrounds the channel in all direction , therefore it can overcome the short channel effects effectively than other devices. In this paper, surface potential and electric field distribution is modelled. The proposed surface potential model is compared with the existing central potential model. It is observed that the short channel effects (SCE) is reduced and the performance is better than the existing method.
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